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Zircon R1 Series 1 TB (SanDisk BiCS5)

1 TB
Capacity
MAP1202A-F1C
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
The Zircon R1 Series is a solid-state drive in the M.2 2280 form factor, launched in February 2023. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Zircon R1 Series interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the MAP1202A-F1C Cougar from MaxioTech, a DRAM cache is not available. Zircon has installed 112-layer TLC NAND flash on the R1 Series, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The R1 Series is rated for sequential read speeds of up to 3,400 MB/s and 3,100 MB/s write; random IO reaches 330K IOPS for read and 250K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Zircon guarantees an endurance rating of 1536 TBW, a high value.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB
Hardware Versions:
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Feb 2023
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: MaxioTech
Name: MAP1202A-F1C Cougar
Architecture: ARM Cortex-R5
Core Count: Dual-Core
Foundry: TSMC
Process: 22 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 8 MB

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 3,100 MB/s
Random Read: 330,000 IOPS
Random Write: 250,000 IOPS
Endurance: 1536 TBW
Warranty: 3 Years
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 1.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Typ. Endurance: 1700 ~ 3000 P.E.C.
Typ. pSLC Endurance: 50.000 ~ 100.000 P.E.C.

Jun 1st, 2024 17:43 EDT change timezone

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