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XPG Gammix S10 512 GB

512 GB
Capacity
SM2260
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Front
Tom's Hardware
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The XPG Gammix S10 is a solid-state drive in the M.2 2280 form factor, launched in 2018. It is available in capacities ranging from 128 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the XPG Gammix S10 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2260 from Silicon Motion, a DRAM cache chip is available. XPG has installed 32-layer TLC NAND flash on the Gammix S10, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 25 GB, once it is full, writes complete at 500 MB/s. Copying data out of the SLC cache (folding) completes at 17 MB/s. The Gammix S10 is rated for sequential read speeds of up to 1,800 MB/s and 860 MB/s write; random IOPS reach up to 130K for reads and 140K for writes.
At its launch, the SSD was priced at 165 USD. The warranty length is set to five years, which is an excellent warranty period. XPG guarantees an endurance rating of 320 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 128 GB 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2018
Price at Launch: 165 USD
Part Number: ASX7000NPC-512GT-C
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.2
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2260
Architecture: ARM 32-bit Cortex-R
Core Count: Dual-Core
Foundry: TSMC
Process: 40 nm
Flash Channels: 8
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B0KB FortisFlash
Part Number: 29F01T2ANCMG2
Type: TLC
Technology: 32-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 2 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Die Size: 168 mm²
(2.3 Gbit/mm²)
Dies per Chip: 6 dies @ 384 Gbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 92 µs
Program Time (tProg): 2100 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 695 MB/s
Die Write Speed: 30 MB/s
Endurance:
(up to)
1500 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 548 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: NANYA NT5CC128M16IP-DI
Capacity: 512 MB
(2x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 1,800 MB/s
Sequential Write: 860 MB/s
Random Read: 130,000 IOPS
Random Write: 140,000 IOPS
Endurance: 320 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 25 GB
(20 GB Dynamic
+ 5 GB Static)
Speed when Cache Exhausted: approx. 500 MB/s
Cache Folding Speed: 17 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

This drive has a Hybrid pSLC Cache between 16GB ~ 25GB
Natvie TLC speeds varies from 17 MB/s to 500 MB/s
NAND Bus speed might be between 533 MT/s ~ 667 MT/s.

NAND Die:

tPROG with overhead: 1630 µs (Avg - 19.6 MB/s)

Jun 1st, 2024 15:31 EDT change timezone

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