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Western Digital SN730 256 GB

256 GB
Capacity
WD 20-82-00705
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN730 is a solid-state drive in the M.2 2280 form factor, launched in 2019. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 256 GB variant. With the rest of the system, the Western Digital SN730 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-00705-A2 Triton MP28 from WD, a DRAM cache chip is available. Western Digital has installed 96-layer TLC NAND flash on the SN730, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The SN730 is rated for sequential read speeds of up to 3,150 MB/s and 2,100 MB/s write; random IO reaches 270K IOPS for read and 280K for writes.
At its launch, the SSD was priced at 89 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 256 GB
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: 2019
Price at Launch: 89 USD
Part Number: SDBPNTY-256G
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.10 W (Idle)
2.0 W (Avg)
3.9 W (Max)

Controller

Manufacturer: WD
Name: 20-82-00705-A2 Triton MP28
Architecture: ARM 32-bit
Core Count: Triple-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 2 chips @ 1 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4
Name: Samsung
Capacity: 256 MB
(1x 256 MB)

Performance

Sequential Read: 3,150 MB/s
Sequential Write: 2,100 MB/s
Random Read: 270,000 IOPS
Random Write: 280,000 IOPS
Endurance: 200 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

Drive:

Data collected from the Manufacturer's Datasheet

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

May 18th, 2024 04:18 EDT change timezone

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