Report an Error

Teamgroup Vulcan 500 GB

500 GB
Capacity
SM2258G
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Package
Package
PCB Front
Tom's Hardware
PCB Front
Flash
Tom's Hardware
Flash
DRAM
Tom's Hardware
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Teamgroup Vulcan was a solid-state drive in the 2.5" form factor, launched in August 2020, that is no longer in production. It was available in capacities ranging from 250 GB to 1 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the Teamgroup Vulcan interfaces using a SATA 6 Gbps connection. The SSD controller is the SM2258G from Silicon Motion, a DRAM cache chip is available. Teamgroup has installed 64-layer TLC NAND flash on the Vulcan, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The Vulcan is rated for sequential read speeds of up to 560 MB/s and 510 MB/s write; random IOPS reach up to 90K for reads and 80K for writes.
At its launch, the SSD was priced at 59 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Teamgroup guarantees an endurance rating of 240 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 500 GB
Variants: 250 GB 500 GB 1 TB
Overprovisioning: 46.3 GB / 10.0 %
Production: End-of-life
Released: Aug 2020
Price at Launch: 59 USD
Part Number: T253TV500G3C301
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.41 W (Idle)
1.8 W (Avg)
3.0 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2258G
Architecture: ARC 32-bit
Core Count: Single-Core
Frequency: 400 MHz
Process: 40 nm
Flash Channels: 4
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B17A FortisFlash
Rebranded: CHPMG7M9052 (Rebranded by Teamgroup)
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 2 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 16 nm
Die Size: 108 mm²
(4.7 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 88 µs
Program Time (tProg): 930 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 727 MB/s
Die Write Speed: 69 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: DDR3-1600 CL11
Name: SAMSUNG K4B4G1646B-KCK0
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 510 MB/s
Random Read: 90,000 IOPS
Random Write: 80,000 IOPS
Endurance: 240 TBW
Warranty: 3 Years
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

tPROG with some Overhead: ~ 930µs (Avg)
Effective Program page time without VPP : 1900μs(TYP) ( ~ 33 MB/s)

Jun 1st, 2024 14:49 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts