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Solidigm P41 Plus 512 GB

512 GB
Capacity
SM2269XT
Controller
QLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Solidigm P41 Plus is a solid-state drive in the M.2 2280 form factor, launched on August 2nd, 2022. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Solidigm P41 Plus interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the SM2269XT from Silicon Motion, a DRAM cache is not available. Solidigm has installed 144-layer QLC NAND flash on the P41 Plus, the flash chips are made by Intel. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 75 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The P41 Plus is rated for sequential read speeds of up to 4,125 MB/s and 3,325 MB/s write; random IOPS reach up to 390K for reads and 540K for writes.
At its launch, the SSD was priced at 50 USD. The warranty length is set to five years, which is an excellent warranty period. Solidigm guarantees an endurance rating of 200 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Aug 2nd, 2022
Price at Launch: 50 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2269XT
Architecture: ARM 32-bit Cortex-R8
Core Count: Dual-Core
Frequency: 650 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 8
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Intel
Name: N38A
Type: QLC
Technology: 144-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 4 Tbit
Topology: Replacement Gate
Die Size: 80 mm²
(12.8 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 3
Word Lines: 161 per NAND String
89.4% Vertical Efficiency
Read Time (tR): 85 µs
Program Time (tProg): 1630 µs
Block Erase Time (tBERS): 35 ms
Die Read Speed: 752 MB/s
Die Write Speed: 40 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 9216 Pages
Plane Size: 1032 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 4,125 MB/s
Sequential Write: 3,325 MB/s
Random Read: 390,000 IOPS
Random Write: 540,000 IOPS
Endurance: 200 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 75 GB
(67 GB Dynamic
+ 8 GB Static)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

The difference between this and the non-XT revision is that this revision doesn't support DRAM, in fact it supports HMB (Host Memory Buffer). Also, this revision has a different package (247-balls FCCSP).

NAND Die:

Block size is 48MB
Block Erase Time (tBERS): Maximum is 35 ms

Jun 1st, 2024 15:17 EDT change timezone

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