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Seagate FireCuda 510 1 TB

1 TB
Capacity
Phison E12
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
Tom's Hardware
Back
Package
Package
PCB Front
Tom's Hardware
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Seagate FireCuda 510 is a solid-state drive in the M.2 2280 form factor, launched in 2019. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Seagate FireCuda 510 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12-27 from Phison, a DRAM cache chip is available. Seagate has installed 64-layer TLC NAND flash on the FireCuda 510, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 28 GB, once it is full, writes complete at 1075 MB/s. The FireCuda 510 is rated for sequential read speeds of up to 3,450 MB/s and 3,200 MB/s write; random IOPS reach up to 620K for reads and 600K for writes.
At its launch, the SSD was priced at 188 USD. The warranty length is set to five years, which is an excellent warranty period. Seagate guarantees an endurance rating of 1300 TBW, a good value.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2019
Price at Launch: 188 USD
Part Number: ZP1000GM30001
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.62 W (Idle)
3.3 W (Avg)
5.2 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12-27
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Part Number: TABBG55AIV
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 3.2
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 1478 Blocks

DRAM Cache

Type: DDR4-2400
Name: SK Hynix H5AN4G8NBJR
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx8

Performance

Sequential Read: 3,450 MB/s
Sequential Write: 3,200 MB/s
Random Read: 620,000 IOPS
Random Write: 600,000 IOPS
Endurance: 1300 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.7
SLC Write Cache: approx. 28 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1075 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

The controller could have changed from E12 to E12S and some revisions are Kioxia 64L TLC (BiCS3) and not 96L TLC BiCS4.

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)

Jun 1st, 2024 18:02 EDT change timezone

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