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Samsung PM9A3 3.8 TB

3.8 TB
Capacity
Samsung Elpis
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 22110
Form Factor
Front
DRAM
DRAM
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM9A3 is a solid-state drive in the M.2 22110 form factor, launched in February 2021. It is only available in the 3.8 TB capacity listed on this page. With the rest of the system, the Samsung PM9A3 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Elpis (S4LV003) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the PM9A3, the flash chips are made by Samsung. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PM9A3 is rated for sequential read speeds of up to 6,900 MB/s and 4,100 MB/s write; random IO reaches 1000K IOPS for read and 180K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 7008 TBW, a high value.

Solid-State-Drive

Capacity: 3.8 TB (3840 GB)
Overprovisioning: 519.7 GB / 14.5 %
Production: Active
Released: Feb 2021
Part Number: MZ1L23T8HBLA-00A07
Market: Enterprise

Physical

Form Factor: M.2 22110
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 3.5 W (Idle)
11.0 W (Avg)
13.0 W (Max)

Controller

Manufacturer: Samsung
Name: Elpis (S4LV003)
Architecture: ARM 32-bit Cortex-R8
Core Count: 5-Core
Foundry: Samsung
Process: 8 nm
Flash Channels: 8 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Part Number: K9DVGB8J1B-DCK0
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: LPDDR4
Name: Samsung K4FJE3Q4HA-BGCH
Capacity: 6144 MB
(1x 6144 MB)
Organization: 48Gx32

Performance

Sequential Read: 6,900 MB/s
Sequential Write: 4,100 MB/s
Random Read: 1,000,000 IOPS
Random Write: 180,000 IOPS
Endurance: 7008 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

NAND Flash Bus not confirmed, could be higher or slower.

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning
Jun 1st, 2024 17:28 EDT change timezone

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