Report an Error

Samsung 990 Evo 1 TB

1 TB
Capacity
Samsung Piccolo
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
The Samsung 990 Evo is a solid-state drive in the M.2 2280 form factor, launched in 2024. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 990 Evo interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Piccolo (S4LY022) from Samsung, a DRAM cache is not available. Samsung has installed 133-layer TLC NAND flash on the 990 Evo, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 990 Evo is rated for sequential read speeds of up to 5,000 MB/s and 4,200 MB/s write; random IO reaches 680K IOPS for read and 800K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2024
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown
Interface:PCIe 5.0 x2

Controller

Manufacturer: Samsung
Name: Piccolo (S4LY022)
Architecture: ARM 32-bit Cortex-R8
Core Count: 6-Core
Foundry: Samsung FinFET
Process: 5 nm
Flash Channels: 4 @ 2,400 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6 Prime
Type: TLC
Technology: 133-layer
Speed: 1200 MT/s
Capacity: 2 chips @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
97.8% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,200 MB/s
Random Read: 680,000 IOPS
Random Write: 800,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

4-sub planes

Jun 1st, 2024 17:33 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts