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Samsung 840 Pro 512 GB

512 GB
Capacity
Samsung MDX
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Back
Package
Tweaktownn
Package
PCB Front
Tweaktownn
PCB Front
PCB Back
Tweaktownn
PCB Back
DRAM
Tweaktownn
DRAM
Flash
Tweaktownn
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 840 Pro was a solid-state drive in the 2.5" form factor, launched in October 2012, that is no longer in production. It was available in capacities ranging from 128 GB to 512 GB. This page reports specifications for the 512 GB variant. With the rest of the system, the Samsung 840 Pro interfaces using a SATA 6 Gbps connection. The SSD controller is the MDX (S4LN021X01) from Samsung, a DRAM cache chip is available. Samsung has installed MLC NAND flash on the 840 Pro, the flash chips are made by Samsung. The 840 Pro is rated for sequential read speeds of up to 530 MB/s and 520 MB/s write; random IO reaches 90K IOPS for read and 100K for writes.
At its launch, the SSD was priced at 600 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 73 TBW, a very low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 128 GB 256 GB 512 GB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: Oct 2012
Price at Launch: 600 USD
Part Number: MZ-7PD512
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.04 W (Idle)
Unknown (Avg)
15.0 W (Max)

Controller

Manufacturer: Samsung
Name: MDX (S4LN021X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 300 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: 21nm MLC
Part Number: K9PHGY8U7A-CCK0
Type: MLC
Technology: Planar
Speed: 166 MT/s .. 400 MT/s
Capacity: 8 chips @ 512 Gbit
Toggle: 2.0
Topology: Floating Gate
Process: 21 nm
Die Size: 162 mm²
(0.4 Gbit/mm²)
Dies per Chip: 8 dies @ 64 Gbit
Planes per Die: 4
Read Time (tR): 60 µs
Program Time (tProg): 1360 µs
Block Erase Time (tBERS): 5.0 ms
Die Write Speed: 25 MB/s
Page Size: 8 KB
Block Size: 128 Pages
Plane Size: 2000 Blocks

DRAM Cache

Type: LPDDR2-1066
Name: SAMSUNG K4P4G324EB-FGC2
Capacity: 512 MB
(1x 512 MB)

Performance

Sequential Read: 530 MB/s
Sequential Write: 520 MB/s
Random Read: 90,000 IOPS
Random Write: 100,000 IOPS
Endurance: 73 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.1
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Controller might have support for 8 Chip enbales commands per channel.

Jun 1st, 2024 16:58 EDT change timezone

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