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Samsung 840 EVO 1 TB

1 TB
Capacity
Samsung MEX
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Back
Back
PCB Front
Storage Review
PCB Front
PCB Back
Storage Review
PCB Back
DRAM
Storage Review
DRAM
Flash
Storage Review
Flash
SSD Controller
Controller
The Samsung 840 EVO was a solid-state drive in the 2.5" form factor, launched in August 2013, that is no longer in production. It was available in capacities ranging from 120 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Samsung 840 EVO interfaces using a SATA 6 Gbps connection. The SSD controller is the MEX (S4LN045X01) from Samsung, a DRAM cache chip is available. Samsung has installed TLC NAND flash on the 840 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 12 GB, once it is full, writes complete at 420 MB/s. The 840 EVO is rated for sequential read speeds of up to 540 MB/s and 520 MB/s write; random IO reaches 98K IOPS for read and 90K for writes.
At its launch, the SSD was priced at 650 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. The TBW rating for the Samsung 840 EVO 1 TB is unknown.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 120 GB 250 GB 500 GB 750 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: End-of-life
Released: Aug 2013
Price at Launch: 650 USD
Part Number: MZ-7TE1T0BW
Market: Consumer

Physical

Form Factor: 2.5" (Double-Sided)
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.05 W (Idle)
Unknown (Avg)
7.0 W (Max)

Controller

Manufacturer: Samsung
Name: MEX (S4LN045X01)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 400 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: 19nm
Part Number: K90KGY8S7M-CCK0
Type: TLC
Technology: Planar
Speed: 533 MT/s
Capacity: 8 chips @ 1 Tbit
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 144 mm²
(0.9 Gbit/mm²)
Dies per Chip: 8 dies @ 128 Gbit
Planes per Die: 4
Page Size: 8 KB

DRAM Cache

Type: LPDDR2-1066
Name: SAMSUNG K4P8G304EB-FGC2
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx32

Performance

Sequential Read: 540 MB/s
Sequential Write: 520 MB/s
Random Read: 98,000 IOPS
Random Write: 90,000 IOPS
Endurance: Unknown
Warranty: 3 Years
MTBF: 1.5 Million Hours
SLC Write Cache: approx. 12 GB
(static only)
Speed when Cache Exhausted: approx. 420 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
RGB Lighting: No
PS5 Compatible: No

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Notes

Jun 1st, 2024 18:07 EDT change timezone

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