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Netac NV3000 1 TB (MAP1202 + SK Hynix V7)

1 TB
Capacity
MAP1202A-F1C
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Netac NV3000 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the Netac NV3000 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the MAP1202A-F1C Cougar from MaxioTech, a DRAM cache is not available. Netac has installed 176-layer TLC NAND flash on the NV3000, the flash chips are made by SK Hynix. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The NV3000 is rated for sequential read speeds of up to 3,100 MB/s and 2,100 MB/s write; random IOPS reach up to 200K for reads and 190K for writes.
At its launch, the SSD was priced at 94 USD. The warranty length is set to five years, which is an excellent warranty period. Netac guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2022
Price at Launch: 94 USD
Part Number: NT01NV3000-1T0-E4X
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: MaxioTech
Name: MAP1202A-F1C Cougar
Architecture: ARM Cortex-R5
Core Count: Dual-Core
Foundry: TSMC
Process: 22 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Part Number: H25G9TC18488
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,100 MB/s
Sequential Write: 2,100 MB/s
Random Read: 200,000 IOPS
Random Write: 190,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size

Jun 1st, 2024 15:33 EDT change timezone

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