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MSI Spatium M580 Frozr 4TB 4 TB

4 TB
Capacity
Phison E26
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Front
PCB Front
PCB Back
PCB Back
DRAM
DRAM
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The MSI Spatium M580 Frozr 4TB is a solid-state drive in the M.2 2280 form factor, launched in January 2024. It is only available in the 4 TB capacity listed on this page. With the rest of the system, the MSI Spatium M580 Frozr 4TB interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the PS5026-E26 from Phison, a DRAM cache chip is available. MSI has installed 232-layer TLC NAND flash on the Spatium M580 Frozr 4TB, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 400 GB, once it is full, writes complete at 4000 MB/s. Copying data out of the SLC cache (folding) completes at 1000 MB/s. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The Spatium M580 Frozr 4TB is rated for sequential read speeds of up to 14,100 MB/s and 12,600 MB/s write.
At its launch, the SSD was priced at 515 USD. The warranty length is set to five years, which is an excellent warranty period. MSI guarantees an endurance rating of 3000 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Overprovisioning: 370.7 GB / 10.0 %
Production: Active
Released: Jan 2024
Price at Launch: 515 USD
Part Number: Spatium M580 Frozr 4TB
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: 2.2 W (Idle)
4.8 W (Avg)
11.2 W (Max)

Controller

Manufacturer: Phison
Name: PS5026-E26
Architecture: ARM 32-bit Cortex-R5 + AndesCore 32-bit N25F RISC-V
Core Count: 5-Core
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Part Number: NY256
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 8 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
2500 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: LPDDR4-4266
Name: SK Hynix H9HCNNNCPUMLXR-NEE
Capacity: 8192 MB
(2x 4096 MB)
Organization: 32Gx32

Performance

Sequential Read: 14,100 MB/s
Sequential Write: 12,600 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 3000 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 400 GB
(dynamic only)
Speed when Cache Exhausted: approx. 4000 MB/s
Cache Folding Speed: 1000 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

This controller features a dual core Cortex-R5 as a primary cores, while a Tripple AndesCore 32-bit N25F RISC-V at 400-500 MHz act as a CoX Processor.

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Jun 1st, 2024 17:42 EDT change timezone

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