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Micron 9100 Pro 800 GB

800 GB
Capacity
89HF16P04CG3
Controller
MLC
Flash
PCIe 3.0 x4
Interface
U.2
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Micron 9100 Pro was a solid-state drive in the U.2 form factor, launched in July 2017, that is no longer in production. It was available in capacities ranging from 800 GB to 3 TB. This page reports specifications for the 800 GB variant. With the rest of the system, the Micron 9100 Pro interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the NVMEC16 Princeton 89HF16P04CG3 from PMC-Sierra, a DRAM cache chip is available. Micron has installed MLC NAND flash on the 9100 Pro, the flash chips are made by Micron. The 9100 Pro is rated for sequential read speeds of up to 2,050 MB/s and 690 MB/s write; random IO reaches 525K IOPS for read and 50K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Micron guarantees an endurance rating of 2400 TBW, a high value.

Solid-State-Drive

Capacity: 800 GB
Variants: 800 GB 1.6 TB 3 TB
Overprovisioning: 278.9 GB / 37.4 %
Production: End-of-life
Released: Jul 2017
Part Number: MTFDHAL800MCE
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 3.0 x4
Protocol: NVMe 1.1
Power Draw: 7.0 W (Idle)
16.0 W (Avg)
30.0 W (Max)

Controller

Manufacturer: PMC-Sierra
Name: NVMEC16 Princeton 89HF16P04CG3
Architecture: RISC Tensilica Xtensa 32-bit
Core Count: 16-Core
Frequency: 500 MHz
Flash Channels: 16 @ 400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: L95B (16nm)
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 333 MT/s
Capacity: 16 chips @ 512 Gbit
ONFI: 3.2
Topology: Floating Gate
Process: 16 nm
Dies per Chip: 4 dies @ 128 Gbit
Planes per Die: 2
Read Time (tR): 115 µs
Program Time (tProg): 1600 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 278 MB/s
Die Write Speed: 20 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
Block Size: 512 Pages
Plane Size: 1048 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: Micron MT41K512M8RH-125:E (D9QBJ)
Capacity: 4608 MB
(9x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 2,050 MB/s
Sequential Write: 690 MB/s
Random Read: 525,000 IOPS
Random Write: 50,000 IOPS
Endurance: 2400 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 1.6
Write Cache: N/A
Endurance - Random Writes 4KB:790 TBW

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

Microsemi (previously PMC) Flashtec NVMe1032 controller

NAND Die:

• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks

• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)
Jun 1st, 2024 17:06 EDT change timezone

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