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Memblaze PBlaze5 C916 6.4 TB

6.4 TB
Capacity
PM8607
Controller
TLC
Flash
PCIe 3.0 x8
Interface
Add-In Card
Form Factor
Front
PCB Front
PCB Front
PCB Back
PCB Back
Flash
Flash
DRAM
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Memblaze PBlaze5 C916 is a solid-state drive in the Add-In Card form factor, launched on December 5th, 2020. It is only available in the 6.4 TB capacity listed on this page. With the rest of the system, the Memblaze PBlaze5 C916 interfaces using a PCI-Express 3.0 x8 connection. The SSD controller is the PM8607 NVMe2016 Belmar from Microchip Flashtech Microsemi, a DRAM cache chip is available. Memblaze has installed 64-layer TLC NAND flash on the PBlaze5 C916, the flash chips are made by Micron. The PBlaze5 C916 is rated for sequential read speeds of up to 5,900 MB/s and 3,800 MB/s write; random IO reaches 1000K IOPS for read and 303K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Memblaze guarantees an endurance rating of 35785 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 6.4 TB (6536 GB)
Overprovisioning: 2104.9 GB / 34.6 %
Production: Active
Released: Dec 5th, 2020
Part Number: P5916CH0640M00
Market: Enterprise

Physical

Form Factor: Add-In Card
Interface: PCIe 3.0 x8
Protocol: NVMe 1.2
Power Draw: 7.0 W (Idle)
Unknown (Avg)
25.0 W (Max)

Controller

Manufacturer: Microchip Flashtech Microsemi
Name: PM8607 NVMe2016 Belmar
Architecture: Tensilica Xtensa 32-bit
Core Count: 32-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 16 @ 533 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B17A FortisMax
Part Number: NW921
Rebranded: MT29F2T08EMHAFJ4-3T:A
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 32 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 16 nm
Die Size: 108 mm²
(4.7 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 88 µs
Program Time (tProg): 880 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 727 MB/s
Die Write Speed: 36 MB/s
Endurance:
(up to)		 10000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: DDR4-2400
Name: Micron MT40A1G8WE-083E:B Rev B-Die (D9TBH)
Capacity: 9216 MB
(9x 1024 MB)
Organization: 8Gx8

Performance

Sequential Read: 5,900 MB/s
Sequential Write: 3,800 MB/s
Random Read: 1,000,000 IOPS
Random Write: 303,000 IOPS
Endurance: 35785 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 3.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

It has a Front-end controller, a FTL controller alongside a back-end controller
16-core for compute + 16-core for flash channels

NAND Die:

This Die has a much higher endurance than the Regular B17A FortisFlash
Jun 1st, 2024 19:11 EDT change timezone

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