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Kingston NV2 250 GB (SM2267XT)

250 GB
Capacity
SM2267XT
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

The Kingston NV2 is a solid-state drive in the M.2 2280 form factor, launched on September 7th, 2022. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 250 GB variant. With the rest of the system, the Kingston NV2 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the SM2267XT from Silicon Motion, a DRAM cache is not available. Kingston has installed 112-layer TLC NAND flash on the NV2, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The NV2 is rated for sequential read speeds of up to 3,000 MB/s and 1,300 MB/s write.
At its launch, the SSD was priced at 30 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Kingston guarantees an endurance rating of 80 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 250 GB
Variants: 250 GB 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 23.2 GB / 10.0 %
Production: Active
Released: Sep 7th, 2022
Price at Launch: 30 USD
Part Number: SNV2S/250G
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2267XT
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: Unknown
Toggle: 4.0
Topology: Charge Trap
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,000 MB/s
Sequential Write: 1,300 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 80 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Notes

Drive:

Kingston might swap components in the future in order to meet the volume demands for this product

Controller:

The difference between this and the non-XT revision is that this revision doesn't support DRAM, in fact it supports HMB (Host Memory Buffer). Also, this revision has a different package (247-ball FCCSP).

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.

Jun 1st, 2024 15:10 EDT change timezone

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