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Crucial MX100 512 GB

512 GB
Capacity
88SS9189
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Front
Back
TweakTown
Back
Package
Package
PCB Front
TweakTown
PCB Front
PCB Back
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PCB Back
Flash
TweakTown
Flash
DRAM
TweakTown
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Crucial MX100 was a solid-state drive in the 2.5" form factor, launched in May 2014, that is no longer in production. It was available in capacities ranging from 128 GB to 512 GB. This page reports specifications for the 512 GB variant. With the rest of the system, the Crucial MX100 interfaces using a SATA 6 Gbps connection. The SSD controller is the 88SS9189 Renoir from Marvell, a DRAM cache chip is available. Crucial has installed MLC NAND flash on the MX100, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The MX100 is rated for sequential read speeds of up to 550 MB/s and 500 MB/s write; random IOPS reach up to 90K for reads and 85K for writes.
At its launch, the SSD was priced at 225 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Crucial guarantees an endurance rating of 72 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 128 GB 256 GB 512 GB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: May 2014
Price at Launch: 225 USD
Part Number: CT512MX100SSD1
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.09 W (Idle)
1.3 W (Avg)
Unknown (Max)

Controller

Manufacturer: Marvell
Name: 88SS9189 Renoir
Architecture: ARM 32-bit ARM9/ARMv5
Core Count: Dual-Core
Frequency: 400 MHz
Foundry: TSMC
Process: 55 nm
Flash Channels: 8 @ 200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: L95B (16nm)
Part Number: NW656 (MT29F256G08CECCBH6-10:C)
Rebranded: Micron's 16nm MLC
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 333 MT/s
Capacity: 16 chips @ 256 Gbit
ONFI: 3.2
Topology: Floating Gate
Process: 16 nm
Dies per Chip: 2 dies @ 128 Gbit
Planes per Die: 2
Read Time (tR): 115 µs
Program Time (tProg): 1600 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 278 MB/s
Die Write Speed: 20 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
Block Size: 512 Pages
Plane Size: 1048 Blocks

DRAM Cache

Type: LPDDR2-1066
Name: MT42L256M16D1GU-18 WT:A (FBGA: D9RLT)
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 550 MB/s
Sequential Write: 500 MB/s
Random Read: 90,000 IOPS
Random Write: 85,000 IOPS
Endurance: 72 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

MX100 uses small SMDs Ceramic capacitors, which do not provide full protection from host power failures, but instead protect the data at rest. (backup circuitry that merely protects the existing data from corruption)
Meaning that the NAND mapping table as well as any in-flight user data are still vulnerable to sudden power losses.
Supports R.A.I.N. - (Redundant Array of Independent NAND) is also included to protect against page/block level failures and the parity ratio remains at 127:1 similar to the M550 (i.e. one bit of parity is generated for every 127 bits of user data).

NAND Die:

• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks

• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)
Jun 1st, 2024 16:55 EDT change timezone

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