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Crucial BX100 250 GB

250 GB
Capacity
SM2246EN
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Front
Back
Back
Package
Package
PCB Front
Nikktech
PCB Front
PCB Back
Nikktech
PCB Back
Flash
Nikktech
Flash
DRAM
Nikktech
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Crucial BX100 was a solid-state drive in the 2.5" form factor, launched in 2014, that is no longer in production. It was available in capacities ranging from 120 GB to 1 TB. This page reports specifications for the 250 GB variant. With the rest of the system, the Crucial BX100 interfaces using a SATA 6 Gbps connection. The SSD controller is the SM2246EN from Silicon Motion, a DRAM cache chip is available. Crucial has installed MLC NAND flash on the BX100, the flash chips are made by Micron. The BX100 is rated for sequential read speeds of up to 535 MB/s and 370 MB/s write; random IO reaches 87K IOPS for read and 70K for writes.
At its launch, the SSD was priced at 99 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Crucial guarantees an endurance rating of 72 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 250 GB
Variants: 120 GB 250 GB 500 GB 1 TB
Overprovisioning: 23.2 GB / 10.0 %
Production: End-of-life
Released: 2014
Price at Launch: 99 USD
Part Number: CT250BX100SSD1
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.11 W (Idle)
Unknown (Avg)
4.0 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2246EN
Architecture: ARC 32-bit
Core Count: Single-Core
Frequency: 400 MHz
Process: 55 nm
Flash Channels: 4
Chip Enables: 8

NAND Flash

Manufacturer: Micron
Name: L95B (16nm)
Part Number: NW744 (MT29F512G08CMCCBH7-10:C)
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 333 MT/s
Capacity: 4 chips @ 512 Gbit
ONFI: 3.2
Topology: Floating Gate
Process: 16 nm
Dies per Chip: 4 dies @ 128 Gbit
Planes per Die: 2
Read Time (tR): 115 µs
Program Time (tProg): 1600 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 278 MB/s
Die Write Speed: 20 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
Block Size: 512 Pages
Plane Size: 1048 Blocks

DRAM Cache

Type: DDR3-1600 CL11
Name: MT41K128M16JT-125 M:K (FBGA: D9QNP)
Capacity: 256 MB
(1x 256 MB)
Organization: 2Gx16

Performance

Sequential Read: 535 MB/s
Sequential Write: 370 MB/s
Random Read: 87,000 IOPS
Random Write: 70,000 IOPS
Endurance: 72 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

This drive uses Static pSLC Cache

NAND Die:

• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks

• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)
Jun 1st, 2024 15:47 EDT change timezone

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