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Corsair MP600 500 GB

500 GB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Tweaktown
Package
PCB Front
Tweaktown
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The Corsair MP600 is a solid-state drive in the M.2 2280 form factor, launched in 2019. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the Corsair MP600 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Corsair has installed 96-layer TLC NAND flash on the MP600, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The MP600 is rated for sequential read speeds of up to 4,950 MB/s and 2,500 MB/s write; random IO reaches 550K IOPS for read and 420K for writes.
At its launch, the SSD was priced at 130 USD. The warranty length is set to five years, which is an excellent warranty period. Corsair guarantees an endurance rating of 850 TBW, a good value.

Solid-State-Drive

Capacity: 500 GB
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 46.3 GB / 10.0 %
Production: Active
Released: 2019
Price at Launch: 130 USD
Part Number: CSSD-F500GBMP600
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown (Idle)
Unknown (Avg)
6.3 W (Max)

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TA7AG65AWV
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 800 MT/s
Capacity: 4 chips @ 1 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 59 µs
Program Time (tProg): 625 µs
Die Read Speed: 551 MB/s
Die Write Speed: 56 MB/s
Endurance:
(up to)
1500 P/E Cycles
(3000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN4G8NBJR-UHC
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 4,950 MB/s
Sequential Write: 2,500 MB/s
Random Read: 550,000 IOPS
Random Write: 420,000 IOPS
Endurance: 850 TBW
Warranty: 5 Years
MTBF: 1.7 Million Hours
Drive Writes Per Day (DWPD): 0.9
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
Performance:
tPROG (typical) - 2100 µs (MSB)
tR (typical) - 59 µs
tPROG (ower page) ~ 200 µs
Estimated tPROG between 625 ~ 975 µs

Jun 1st, 2024 18:27 EDT change timezone

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