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Asgard AN4 1 TB

1 TB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Package
Package
Flash
The Overclocking Page
Flash
PCB Front
The Overclocking Page
PCB Front
Flash 2
The Overclocking Page
Flash 2
DRAM
The Overclocking Page
DRAM
PCB Back
The Overclocking Page
PCB Back
SSD Controller
Controller
NAND Die
NAND Die
The Asgard AN4 is a solid-state drive in the M.2 2280 form factor, launched in 2021. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the Asgard AN4 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Asgard has installed 128-layer TLC NAND flash on the AN4, the flash chips are made by YMTC. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 341 GB, once it is full, writes complete at 1440 MB/s. Copying data out of the SLC cache (folding) completes at 793 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The AN4 is rated for sequential read speeds of up to 7,500 MB/s and 5,500 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Asgard guarantees an endurance rating of 700 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2021
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 1.7 W (Idle)
4.2 W (Avg)
6.2 W (Max)

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: YMTC
Name: Xtacking 2.0 (CDT1B)
Rebranded: PYT02TV4IA1-X4PWA
Type: TLC
Technology: 128-layer
Speed: 1600 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.1
Topology: Charge Trap
Die Size: 60 mm²
(8.5 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 141 per NAND String
90.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 620 µs
Block Erase Time (tBERS): 20 ms
Die Read Speed: 1280 MB/s
Die Write Speed: 70 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: Nanya NT5AD256M16D4-HR
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 7,500 MB/s
Sequential Write: 5,500 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 700 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 341 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1440 MB/s
Cache Folding Speed: 793 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

NAND Die:

Read Time (tR): Maximum is 50 µs, typical is lower
Typical Program Time (tPROG): 620 µs
Maximum Program Time (tPROG): Maximum is 910 µs
Block Erase Time (tBERS): Maximum is 20 ms, typical is lower
Array Eficiency of over 92%
YMTC 128L Xtacking 2.0 cell architecture consists of two decks connected through deck-interface buffer layer which is the same process with KIOXIA 112L BiCS 3D NAND structure. Cell size, CSL pitch, and 9-hole VC layouts keep the same design and dimension (horizontal/vertical WL and BL pitches) with previous 64L Xtacking 1.0 cell. Total number of gates is 141 (141T) including selectors and dummy WLs for the TLC operation.
This layout has a 1x 4 Plane layout, each one lineup side by side

Jun 1st, 2024 15:54 EDT change timezone

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