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Aorus Gen4 SSD (v2) 2 TB

2 TB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Aorus Gen4 SSD (v2) is a solid-state drive in the M.2 2280 form factor, launched on May 30th, 2019. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Aorus Gen4 SSD (v2) interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Aorus has installed 96-layer TLC NAND flash on the Gen4 SSD (v2), the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 55 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Gen4 SSD (v2) is rated for sequential read speeds of up to 5,000 MB/s and 4,400 MB/s write; random IO reaches 750K IOPS for read and 700K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Aorus guarantees an endurance rating of 3600 TBW, a good value.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: May 30th, 2019
Part Number: GP-ASM2NE6200TTTD
Market: Consumer

Physical

Form Factor: M.2 2280
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown (Idle)
Unknown (Avg)
6.6 W (Max)

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SK HYNIX H5AN8G8NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,400 MB/s
Random Read: 750,000 IOPS
Random Write: 700,000 IOPS
Endurance: 3600 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: approx. 55 GB
(dynamic only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)
Jun 1st, 2024 17:50 EDT change timezone

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