Report an Error

Anaconda i3 1 TB (MAP1202 + SK Hynix V7 512Gb)

1 TB
Capacity
MAP1202A-F1C
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Anaconda i3 is a solid-state drive in the M.2 2280 form factor, launched in 2020. It is available in capacities ranging from 256 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Anaconda i3 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the MAP1202A-F1C Cougar from MaxioTech, a DRAM cache is not available. Anaconda has installed 176-layer TLC NAND flash on the i3, the flash chips are made by SK Hynix. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The i3 is rated for sequential read speeds of up to 3,000 MB/s and 3,000 MB/s write.
At its launch, the SSD was priced at 51 USD. The warranty length is set to five years, which is an excellent warranty period. Anaconda guarantees an endurance rating of 640 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2020
Price at Launch: 51 USD
Part Number: Series-i3
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: MaxioTech
Name: MAP1202A-F1C Cougar
Architecture: ARM Cortex-R5
Core Count: Dual-Core
Foundry: TSMC
Process: 22 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 32 MB

Performance

Sequential Read: 3,000 MB/s
Sequential Write: 3,000 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 640 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size

Jun 1st, 2024 17:15 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts